From the top layer, cross-sectional line scan profiling of the InAlN film showed that the major In and Al elements were homogeneously distributed over the cross section of the stem. The result was observed to be similar to MOCVD growth of AlInN films on the GaN layer [29]. The average concentrations in the brighter regions are roughly estimated to be 70% ± 5% In and 30% ± 5% Al, while the concentrations in the darker areas are 64% ± 5% In and 36% ± 5% Al. Figure 5 HAADF analysis of In 0.71 Al 0.29   N films. (a) HAADF micrograph and (b) EDS line scan of the In0.71Al0.29 N film. The optical properties of In x Al1-x N films were investigated by measuring the optical see more reflectance

spectra on a UV/Vis/IR spectrophotometer with integrating sphere (200 to 2,000 nm). The reflectance spectra of all In x Al1-x N films are as shown in Figure  6. Prominent Fabry-Perot interference fringes attributed to multiple-layer-substrate reflections are observed at a long wavelength. However, Fabry-Perot interference fringes increase with the increase of film thickness, since

the interference fringe begins to disappear in the vicinity of the wavelength related to the optical absorption edge [30]. In addition, light scattering-induced changes may have occurred in the PLX4032 chemical structure surface of polycrystalline InAlN films due to surface roughness such as grain, grain boundaries, and microscopic pores. The reflection spectra shows that the optical absorption of the InAlN films redshifts https://www.selleckchem.com/products/gsk1120212-jtp-74057.html with an increase in the In composition x. Figure 6 Reflection spectra of In x Al 1- x N films at various in compositions. Conclusions Highly c-axis-oriented In x Al1-x N films were grown on Si(100) by RF-MOMBE. From XRD results, In0.71Al0.29 N has the best crystalline quality among the In x Al1-x N samples for various values of the In composition fraction x studied here. However, the strain of all InAlN films has not been relaxed after growth. At an In content of <57%, the InAlN/Si(100) exhibits

worse crystallinity which observed obviously large Axenfeld syndrome residual stress. The surface roughness of InAlN films increased with the increase of In composition. The corresponding reflection spectra of the In x Al1-x N films are observed at around 1.5 to 2.55 eV. Acknowledgements This work was supported by the National Science Council (NSC) of Taiwan under contract no. NSC 101-2221-E-009-050-MY3. References 1. Yamamoto A, Sugita K, Bhuiyan AG, Hashimoto A, Narita N: Metal-organic vapor-phase epitaxial growth of InGaN and InAlN for multi-junction tandem solar cells. Mater Renew Sustain Energy 2013, 2:10.CrossRef 2. Yamamoto A, Islam MR, Kang TT, Hashimoto A: Recent advances in InN-based solar cells: status and challenges in InGaN and InAlN solar cells. Phys Stat Sol (c) 2010, 7:1309–1316.CrossRef 3.