In the case of silicon oxide layer, bands D2 and ��800cm?1�� suggest densified character of the film.The first feature that appears in spectra recorded for LaLuO3 and GdSiO is the significant signal below 300cm?1. It www.selleckchem.com/products/baricitinib-ly3009104.html corresponds to boson band reported for excited with visible light Raman scattering from bulk SiO2 [14]. The absence of the relatively strong band in the range of Raman shift between 930cm?1 and 1030cm?1 assigned to second order scattering in Si substrate is also observed for both dielectric layers (LaLuO3 and GdSiO). Small differences between Raman spectra of LaLuO3 and GdSiO in this range of Raman shift will be discussed later. Spectra recorded for LaLuO3 and GdSiO contain not only broad bands, but also narrow lines. full width at half maximum (FWHM) of these lines is the order of 1cm?1.

It suggests vibrations of crystalline structures as origin of these lines. Amorphous structures generate bands with FWHM at the order of 10cm?1. The first line appearing in the scattering observed for both dielectrics has the maximum at about 330cm?1. This line has the best correlation with two strong lines reported for tridymite. These lines are centered around 320cm?1 and 355cm?1 [13]. Broad band merged with one-phonon Si line starts between 380cm?1 and 400cm?1 and is significantly narrower in comparison with the main band observed for SiO2 layer. One narrow line appears in the range of Raman shift between 380cm?1 and 540cm?1 against the background of the main broad band. The maximum of this line equals 390cm?1 for LaLuO3 and 420cm?1 in the case of GdSiO.

The line appearing within broad band has the best correlation with two strong lines of tridymite. The reported maxima positions of tridymite lines are equal to 403cm?1 and 422cm?1 [13]. The main broad band has different shapes for LaLuO3 and GdSiO. In the case of LaLuO3 (Figure 3) the fast increase of the band intensity is observed for Raman shift in the range Batimastat 380cm?1�C420cm?1. It is followed by lower increase in the range 420cm?1�C500cm?1. In the range of Raman shift between 500cm?1 and 540cm?1 one-phonon Si line dominates in Raman spectrum. One narrow line with the maximum at 480cm?1 and slightly broader band with the maximum at 490cm?1 appear in LaLuO3 spectrum. Narrow line can be compared with following lines reported for crystalline structures of SiO2: tridymite (457cm?1), crystalline quartz (465cm?1), or moganite (501cm?1) [13].