J Phys Chem C 2010, 114:18717–18724.CrossRef 45. Gerein NJ, Fleischauer MD, Brett MJ: Effect

of TiO 2 film porosity and thermal processing on TiO 2 -P3HT hybrid materials and photovoltaic device performance. Sol Energ Mat Sol Cells 2010, 94:2343–2350.CrossRef 46. Zeng T-W, Ho C-C, Tu Y-C, Tu G-Y, Wang L-Y, Su W-F: Correlating interface heterostructure, charge recombination, and device efficiency of poly(3-hexyl thiophene)/TiO 2 nanorod solar cell. Langmuir 2011, 27:15255–15260.CrossRef 47. Tu Y-C, Lin J-F, Lin W-C, Liu C-P, Shyue J-J, Su W-F: Improving the electron mobility of TiO 2 nanorods for enhanced efficiency of a polymer-nanoparticle solar cell. Cryst Eng Comm 2012, 14:4772–4776.CrossRef 48. Im

SH, Kim Thiazovivin molecular weight HJ, Rhee JH, Lim CS, Sang SI: Performance improvement of Sb 2 S 3 -sensitized solar cell by introducing Selleck RG7112 hole buffer layer in cobalt complex electrolyte. Energ Environ Sci 2011, 4:2799–2802.CrossRef 49. Cardoso JC, Grimes CA, Feng XJ, Zhang XY, Komarneni S, Zanoni MVB, Bao NZ: Fabrication of coaxial TiO 2 /Sb 2 S 3 nanowire hybrids for efficient nanostructured organic-inorganic thin film photovoltaics. Chem Vistusertib Commun 2012, 48:2818–2820.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions ZC designed the experiment and wrote the article. ZC, MT, and LS carried out the laboratory experiments. GT, BZ, LZ, JY, and JH assisted the technical support for measurements (SEM, EDS, XRD, UV–vis/NIR absorption, Methane monooxygenase and I-V) as well as the data analysis. All authors read and approved the final manuscript.”
“Background Germanium plays a significant

role in various fields such as solar cell, infrared optics, semiconductor, and photoelectric detection. In order to achieve nanoscale surface finishing or micro-nanometric intricate features of germanium devices, a fundamental understanding on deformation process and mechanical properties at the nanoscale becomes essential. Nanoindentation is one of the most important approaches to estimate mechanical properties in nanometer scale, which can test the modulus of elasticity, hardness, and yield stress of thin films or bulk specimens. In recent years, many researchers have focused on phase transformations in silicon during nanoindentation by both experiments and molecular dynamics simulations. The experimental methods for characterization of phase transformation include electrical resistance test [1], Raman spectroscopy [2–6], cross-sectional transmission electron microscopy [3–5], and scanning electron microscopy [2, 4, 5]. Previous studies indicated that nanoindentation-induced phase transformation of monocrystalline silicon occurred, and Si-III, Si-XII, or amorphous-Si were detected after unloading [1–6].